symbol parameter conditions ratings unit v cc supply voltage 10 v v ceo collector-emitter voltage output, h C0.5 +50 v i c collector current current per circuit output, l 400 ma v i input voltage C0.5 v cc v p d power dissipation ta = 25 c, when mounted on board 1.47 w t opr operating temperature C20 +75 t stg storage temperature C55 +125 package type 16p4x 1/4 application description M54566WP are seven-circuit collector-current synchro- nized darlington transistor arr ays. the circuits are made of pnp and npn transistors. both the semiconductor integrated circuits perform hig h-current driving with extre- mely low input-current supply. pin configuration features '09-01 function M54566WP mitsubishi semiconductor 7-unit 400ma darlington transistor array high breakdown voltage (bvceo > 50v) high-current driving (ic(max) = 400ma) active l-level input interfaces between microcom puters and high-voltage, highcurrent drive systems, drives of r elays and printers, and mos-bipolar logic ic interfaces the m54566 is produced by a dding pnp transistors to m54522 inputs. seven circuits h aving active l-level inputs are provided. resistance of 8kw is provided between each input and pnp transistor base. the input emitters are connected to v cc pin (pin 9). output transistor emitters are all connected to the gnd pin (pin 8). collector current is 400ma maximum. collector-emitter supply voltage is 50v maximum. these ics are optimal for driv ers that are driven with n-mos ic output and absorb collector current. 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 o1 o2 o3 o4 o5 o6 o7 in1 in2 in3 in4 in5 in6 in7 gnd v cc output input v cc output input circuit diagram 8k 20k 3k gnd the seven circuits share the v cc and gnd. the diode, indicated with the dotted line, is parasitic, and ca nnot be used. unit : absolute maximum ratings (unless otherwise noted, ta = ?20 ~ +75 c) 2.7k 7.2k
limits symbol parameter min typ max unit v cc supply voltage 4 5 8 v v o output voltage 0 50 v v cc =5v duty cycle no more than 10% 0 350 i c collector current (current per 1 circuit when 7 circuits are coming on simultaneously) v cc =5v duty cycle no more than 30% 0 200 ma v ih h input voltage v cc -0.2 v cc v v il l input voltage 0 v cc -3 v limits symbol parameter test conditions min typ max unit v (br)ceo collector-emitter breakdown voltage i ceo = 100a 50 v v i = v cc - 3v, i c = 350ma 1.1 2.2 v ce(sat) collector-emitter saturation voltage v i = v cc - 3v, i c = 200ma 0.9 1.6 v i i input current v i = v cc C 3.5v -0.3 -0.58 ma i cc supply current (one circuit coming on) v cc =5v, v i =v cc -3.5v 1.4 3.0 ma h fe dc amplification factor v ce = 4v, v cc =5v, i c = 350ma, ta = 25 2000 10000 limits symbol parameter test conditions min typ max unit t on turn-on time 95 t off turn-off time c l = 15pf (note 1 2500 2/4 M54566WP mitsubishi semiconductor 7- unit 400ma darlington transistor array recommended operating conditions electrical characteristics (unless otherwise noted, ta = ?20 ~ +75 c) * : the typical values are those measured under ambient tempera ture (ta) of 25 . there is no guarantee that these values are obtained under an y conditions. switching characteristics (unless otherwise noted, ta = 25 c) note 1 test circuit 50 c l r l v o pg input output measured device (1) pulse generator (pg) characteristics: prr = 1khz, tw = 10 s, tr = 6ns, tf = 6ns, z o = 50 , v i = 1 to 4v (2) input-output conditions : r l = 30 , v o = 10v, v cc = 4v (3) electrostatic capacity c l includes floating capacitance at connections and input capacitance at probes timing diagram output input 50% 50% on 50% 50% off v cc *
3/4 M54566WP mitsubishi semiconductor 7- unit 400ma darlington transistor array typical characteristics thermal derating factor characteristics ambient temperature ta() power dissipation pd(w) 0 25 50 75 100 0 0.5 1.0 1.5 2.0 M54566WP out p ut saturation volta g e output saturation voltage vce(sat)(v) collector current i c (ma) 0 0.5 1.0 1.5 2.0 0 100 200 300 400 duty-cycle-collector characteristics duty cycle (%) collector current i c (ma) 0 20 60 80 100 0 100 200 300 500 ?the collector current values represent the current per circuit. ?repeated frequency R 10hz ?the value in the cir cle represents the value of the simultaneous ly-operated circuit. ?vcc=5v ?ta = 25 40 400 duty-cycle-collector characteristics duty cycle (%) collector current i c (ma) 0 20 60 80 100 0 100 200 300 500 ?the collector current values represent the current per circuit. ?repeated frequency R 10hz ?the value in the cir cle represents the value of the simultaneous ly-operated circuit. ?vcc=5v ?ta = 75 40 400 dc amplification factor collector current characteristics collector current ic(ma) dc amplification factor h fe 10 10 7 ta=25 ta=-20 ta=75 v cc =4v v ce =4v 5 3 2 3 10 2 4 7 5 3 2 10 7 5 3 2 3 10 2 7 5 3 2 10 1 grounded emitter transfer characteristics supply voltage-input voltage v cc -v i (v) collector current i c (ma) 0 0.4 0.8 1.2 1.6 0 100 200 300 400 ta=25 ta=-20 ta=75 v cc =4v v ce =4v ta=25 ta=-20 ta=75 v cc =4v v i =1v
4/4 M54566WP mitsubishi semiconductor 7- unit 400ma darlington transistor array input characteristics supply voltage-input voltage v cc -v i (v) input current i i (ma) 0 1 2 4 5 0 -0.2 -0.6 -0.8 -1.0 3 supply current characteristics supply voltage v cc (v) supply current i cc (ma) 024 8 10 0 1 2 4 5 6 ta=25 ta=-20 ta=75 v i =0v 3 v cc =8v -0.4 ta=25 ta=-20 ta=75
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